NDD04N50Z
ORDERING INFORMATION
Order Number
NDD04N50Z ? 1G
NDD04N50ZT4G
Package
IPAK
(Pb ? Free)
DPAK
(Pb ? Free)
Shipping ?
75 Units / Rail
2500 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
4
Drain
1 2 3
Gate Drain Source
A
Y
WW
G
4
Drain
2
1 Drain 3
Gate Source
= Location Code
= Year
= Work Week
= Pb ? Free Package
http://onsemi.com
6
相关PDF资料
NDD05N50ZT4G MOSFET N-CH 500V 5A DPAK
NDF02N60ZH MOSFET N CH 600V 2.4A TO220FP
NDF03N60ZH MOSFET N CH 600V 4.8A TO220FP
NDF04N60ZH MOSFET N CH 600V 4.8A TO220FP
NDF04N62ZG MOSFET N-CH 620V 2OHM TO220FP
NDF05N50ZH MOSFET N-CH 500V 4.4A TO-220FP
NDF06N60ZG MOSFET N-CH 600V 7.1A TO-220FP
NDF06N60ZH MOSFET N CH 600V 7.1A TO220FP
相关代理商/技术参数
NDD04N50ZT4G 功能描述:MOSFET 500V 3A HV MOSFET DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDD04N60Z 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 1.8 , 600 Volts
NDD04N60Z-1G 功能描述:MOSFET NFET IPAK 600V 4A 1.8R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDD04N60ZG 制造商:ON Semiconductor 功能描述:NDD Series 600 V 1.8 Ohm 83 W Surface Mount N-Channel Power MOSFET - TO-252-3
NDD04N60ZT4G 功能描述:MOSFET NFET DPAK 600V 4A 1.8R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDD04N62Z 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 620 V, 1.8 
NDD04N62Z-1G 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 620 V, 1.8 
NDD04N62ZT4G 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 620 V, 1.8